QT-PUF: Quantum Tunneling Leakage Based PUF for Implantable IoMT Devices
Authors: Yueqi Ma, Vivek Mohan, Chip-Hong Chang et al.
Summary
arXiv:2605. 22113v1 Announce Type: new Abstract: The Internet of Medical Things (IoMT) marks a shift toward decentralized healthcare, enabling continuous monitoring and personalized care through connected wearable and implantable devices.
Relevance
Read next because QT-PUF: Quantum Tunneling Leakage Based PUF for Implantable IoMT Devices overlaps with clean result "LoRA persona trained on alone emits at 23.5% when a co-trained partner learns ..., vs 0% control on Qwen2.5-7B-Instruct (MODERATE confidence)", clean result "Leakage rate is a usable signal for recovering trigger-shaped phrases on Gaperon-1125-1B without knowing the hidden trigger itself (MODERATE confidence)", clean result "Language-mismatch LoRA SFT on Qwen2.5-7B leaks the trained completion language into bystander directives the model was never trained on, absent under same-language SFT (LOW confidence)". Matching terms: text, persona, rect, under, rate, leakage. Source: arxiv cs.CR (Cryptography and Security).
Threat model
Potential threat/caveat for clean result "LoRA persona trained on alone emits at 23.5% when a co-trained partner learns ..., vs 0% control on Qwen2.5-7B-Instruct (MODERATE confidence)": this item discusses bias.
Abstract
arXiv:2605.22113v1 Announce Type: new Abstract: The Internet of Medical Things (IoMT) marks a shift toward decentralized healthcare, enabling continuous monitoring and personalized care through connected wearable and implantable devices. However, ensuring the trust and integrity of these devices themselves remains a major challenge, as physical compromise or counterfeiting can directly endanger patient safety, privacy, and data integrity. This work presents QT-PUF, a gate-tunneling-leakage-based physical unclonable function (PUF) that leverages quantum-mechanical gate leakage resulting from process-induced variations in standard CMOS devices. A differential readout circuit with a pseudo-resistor I-to-V frontend is proposed to convert the picoampere-level leakage variations into digital responses. Unlike existing PUFs such as those based on memory, ring oscillators, or arbiters, which are less suitable for ultralow-power IoMT devices (due to additional circuitry, power overhead, or poor stability), QT-PUF requires no external excitation or stabilization and operates under static bias. Simulation-based measurements for a $\mathbf{65}$~nm CMOS process demonstrate an entropy of $\mathbf{0.9999998}$, an FHD of $\mathbf{0.5001}$, and an average power (energy) consumption of $\mathbf{96.04}$~nW/bit ($\mathbf{19.21}$~fJ/bit, respectively) at $\mathbf{1.2,V}$ and $\mathbf{35,^{\circ}C}$ for the proposed PUF. It operates reliably across $\mathbf{0.9}\text{--}\mathbf{1.3}$~V and $\mathbf{0}\text{--}\mathbf{100,^{\circ}C}$ with an average BER below $\mathbf{0.000163}$ across $\mathbf{1.0}\text{--}\mathbf{1.3}$~V and $\mathbf{10}\text{--}\mathbf{70,^{\circ}C}$ within the operating conditions of typical implantable devices.